| 摘要 |
PROBLEM TO BE SOLVED: To obtain highly reliable wiring which can cope with further scale down and a higher degree of integration by making desired fine wiring formable, by sufficiently securing not on the surface covering property of a plated Cu film, but also the adhesion between the Cu film and a base film, and a semiconductor device provided with the wiring. SOLUTION: At the time of forming fine multilayered Cu wiring by using both the dual damascene method and electroplating method, a base layer 14 composed of a material containing a metal having a high melting point, an intermediate layer 15 composed of Zr or a Zr compound, and a Cu seed layer 16 are formed by the CVD method so as to cover the internal wall surfaces of wiring grooves 12 and via holes 13 before the groove 12 and holes 13 are filled up with plated Cu. The Zr compound used for forming the intermediate film 15 is Zr N(C2H5)2}4. |
