METHOD FOR MANUFACTURING EMBOSS-TYPE STRAP STRUCTURE MOS TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To reduce parasitic capacitance and resistance regarding the source/ drain of a MOS transistor. SOLUTION: In the MOS transistor with emboss-type strap structure, a source region (92) and a drain region (91) are essentially insulated from a transistor substrate (51), and are connected to a transistor substrate (51) by connecting straps (94 and 95). A gate oxide layer (67) and a gate electrode (93) are formed on the substrate (51) between the two straps.