| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of reducing the change in a width of a line of a connecting part of a transferred pattern and effectively connecting a plurality of divided patterns in the case of forming the pattern of the semiconductor device, by transferring to a resist coating the wafer by using an electron beam exposure device by forming a plurality of the divided patterns on the mask. SOLUTION: The method for manufacturing the semiconductor device comprises (a) a step of forming a first mask having a first protrusion thinner by 20 to 50% than a pattern width at a connecting end of the first pattern in a plurality of the divided patterns adjacent to each other, (b) a step of forming a second mask having a second protrusion thinner by 20 to 50% than the pattern width at the connecting end of the second pattern in the plurality of the divided patterns adjacent to each other, and (c) a step of transferring the first and second patterns to the resist coating the wafer so as to superpose at least the parts of the first and second patterns by using the first and second masks.
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