SOI MOSFET DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a SOI MOSFET device having a buried metal body contact so as to improve performance and to reduce a size. SOLUTION: A buried metal via is disposed right under a body region and is aligned with a gate. A buried metal is in contact with a body region but is not in contact with a source or a drain. This structure includes a metal interconnection right under a device in which one or a plurality of interconnection layers are in contact with a silicon insulating film from under the device via a buried oxide film. In this manner, the bottoms of the source of drain diffusion regions and body regions are also connected. Further, also a metal multilayer can be formed under the device by this structure, whereby packing density and performance can be improved.