| 摘要 |
PROBLEM TO BE SOLVED: To prevent a lower layer inter connection formed on a BPSG film from being short-circuited electrically with an upper layer interconnection formed subsequently due to flow of the BPSG film occurring during a thermal process. SOLUTION: The method for fabricating a semiconductor device comprises a step for forming a transistor on a semiconductor substrate 21, a step for depositing a first interlayer insulation film 28 on the semiconductor substrate to cover the transistor, a step for depositing a BPSG film 29 as a planalization film on the first interlayer insulation film, a step for flowing the BPSG film, a step for etching the surface of the BPSG film by sputtering utilizing Ar ions such that the first interlayer insulation film including the BPSG film is exposed while being planalized, a step for forming an interconnection 30 on the exposed first interlayer insulation film, a step for depositing a second interlayer insulation film 31 on the first interlayer insulation film and the BPSG film to cover the interconnection, and a step for forming a metal electrode 33 containing with a specified part of the transistor on the second interlayer insulation film.
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