| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate a defect than in the conventional magnetic tunnel junction(MTJ) element, magnetic poles are generated on both ends since a ferromagnetic layer which will serve as a memory layer is laterally magnetized and a demagnetizing filed caused by the magnetic poles generated on both ends becomes larger with the shrinkage of the element which is required for a higher density of a magnetic memory, eventually causing unstabilized magnetization of the memory layer. SOLUTION: On the ferromagnetic layer 14 which will become the memory layer of the MTJ element 1, a closed magnetic path layer 15 is so formed that a central part may be separated from the ferromagnetic layer 14.</p> |
