METHOD FOR DETECTING ETCHING END POINT OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To easily decide an additional etching time by visually recognizing a dimensional error of etching optically by a microscope. SOLUTION: In order to form a V-shaped groove 2, an etching mask 3 for forming a pilot groove 6 is provided so as to form the groove 6 adjacent to the groove 2 at a position to speculate a size of an undercut part under a peripheral edge of an opening 4 of the mask 3. Then, an ending point of etching is detected by observing the state of a region sandwiched between the groove 2 and the groove 6 as anisotropic etching of a semiconductor substrate 1 is advanced.