Oxygen free passivation cleaning of semiconductor devices in an inductive coupled plasma reactor to remove engraving residues left during the fabrication of integrated circuits

摘要

Oxygen free passivation cleaning of engraving residues from semiconductor substrates in a inductive coupled plasma reactor uses at least 2 % of hydrogen, a quantity of oxygen three times less than the quantity of hydrogen and in all cases less than 25 of the total flow and a moderate ionic bombardment.