SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a small crosstalk noise semiconductor device and its manufacturing method which can prevent diffusion of copper into a low permattrurty insulating film and reduce the permattrurty of a low-permattrurty insulating film and water absorptance. SOLUTION: An interlayer dielectric film 2 having a wiring hole 2a and an interline dielectric film 3 having a wiring trench 3a are formed on a semiconductor substrate 1. The interlayer dielectric film 2 and the interline dielectric film 3 are composed of SiO2 as a main component and contain phosphorus and hydrocarbon. Also, the connection hole 2a of the interlayer dielectric film 2 and interline film 3, and a copper wiring film 4 which covers the wiring trench 3 are formed.