发明名称 TESTING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve a problem that a device is judged failure in electrical characteristic test due to a large contact resistance at contact of a probe when a bump electrode of a semiconductor element is made of AU bump having an uneven rough surface. SOLUTION: A test for judgment of good or no-good is carried out with the contact of a probe 4 in a first step. In a second step, the probe 4 is put in contact with a contacted position 6 of the Au bump 1, where the probe 4 is contacted in the first step, so the contact resistance in the second step is made low when the probe 4 is put in contact with the Au bump 1. Then, the problem of erroneous judgment from defective contact of the probe 4 can be solved, and a decrease of yield in wafer level test can be prevented.
申请公布号 JP2001230285(A) 申请公布日期 2001.08.24
申请号 JP20000036139 申请日期 2000.02.15
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MORI AKIRA;HIRAE KOUICHI
分类号 G01R31/26;G01R1/06;G01R31/28;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R31/26
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