| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive transducing element which can be improve in electron reflection and also provide a method of manufacturing the same. SOLUTION: On a substrate 10, a seed layer 12, buffer layer 13, free layer 14, spacer layer 16, magnetization direction fixed layer 18, and magnetization direction fixing layer 20 are laminated in order. The buffer layer 13 is made of a metal oxide including a nickel (II) oxide or alpha-iron (III) oxide and has a crystal structure and a lattice constant which are similar to those of free layer 14. As a result, an electron reflection factor in an interface between the free layer 14 and the buffer layer 14 can be increased, which increases a rate of change in resistance. |
