| 摘要 |
<p>A method intended for manufacturing an Si-SiC member for a semiconductor heat treatment and suited for heat treatment of a semiconductor wafer of a large diameter while minimizing the contamination of the semiconductor wafer. Further disclosed is a method for manufacturing an Si-SiC member for a semiconductor heat treatment, in which any slip occurs while minimizing the contamination of the semiconductor wafer. The method comprises a first step of kneading SiC powder having a total content of metal impurity of 0.2 ppm or less with a molding assistant, a second step of forming a molded piece from the kneaded material, a third step of calcinating the molded piece, a fourth step of purifying the calcinated body, and a fifth step of impregnating the purified body with silicon in a closed vessel disposed in a heating furnace.</p> |
