Trench-MOSFET arrangement esp. n-channel type - has gate electrode provided in trench and separated from semiconductor body and semiconductor layer by insulation layer

摘要

A trench metal-oxide semiconductor field-effect transistor (MOSFET) has a semiconductor layer (4) placed on a semiconductor body (1,3) of one conductivity type, and is of the other conductivity type, opposite to that of the one conductivity type. A trench (5) is brought from one surface of the semiconductor layer (4) out into the semiconductor layer, and then up to the semiconductor body (1,3). A gate electrode (G) is provided in the trench (5) and is separated from the semiconductor body (1,3) and the semiconductor layer (4) by an insulating layer (6). A source- drain zone (7) of the one conductivity type is provided at the one surface in the semiconductor layer (4) and borders on the trench (5). At least one region (10) of the other conductivity type is provided in the semiconductor body (1,3) in the region of the end of the trench (5) facing opposite the one surface (of the semiconductor layer (4)).