| 摘要 |
A resist pattern is provided on a substrate and includes a first resist layer provided on the substrate and defined by a first organic material which dissolves in an organic solvent, water, or a solvent primarily composed of water, a second resist layer defined by a second organic material provided on the first resist layer, the second organic material having a high absorbance of a light having a predetermined wavelength, and a third resist layer defined by a third organic material provided on the second resist layer, the organic material having a resistance to dry etching and being photosensitive to the light.
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