发明名称 |
Method for fabricating semiconductor device |
摘要 |
A TFT having stable characteristics is obtained by using a crystal silicon film obtained by crystallizing an amorphous silicon film by using nickel. Phosphorus ions are implanted to regions 111 and 112 by using a mask 109. Then, a heat treatment is performed to getter nickel existing in a region 113 to the regions 111 and 112. Then, the mask 109 is side-etched to obtain a pattern 115. Then, the regions 111 and 112 are removed by utilizing the pattern 115 and to pattern the region 113. Thus, a region 116 from which nickel element has been removed is obtained. The TFT is fabricated by using the region 116 as an active layer.
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申请公布号 |
US2001016376(A1) |
申请公布日期 |
2001.08.23 |
申请号 |
US20000749863 |
申请日期 |
2000.12.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO. LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;OHNUMA HIDETO |
分类号 |
G02F1/136;G02F1/1368;H01L21/20;H01L21/322;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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