发明名称 |
Process for manufacturing non-volatile memory cells integrated on a semiconductor substrate |
摘要 |
A method is provided for manufacturing electronic non-volatile memory devices on a semiconductor substrate including a matrix of memory cells having floating gate regions formed on respective active areas and an oxide layer separating the active areas. The method may include forming sidewalls of the floating gate regions that are slanted with respect to a surface of the semiconductor substrate, forming a trench in the oxide layer following the formation of the floating gate regions, and forming a plug of polycrystalline silicon in the trench. The slanted sidewalls of the floating gate regions provide a lead-in for the formation of upper layers.
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申请公布号 |
US2001016379(A1) |
申请公布日期 |
2001.08.23 |
申请号 |
US20000750449 |
申请日期 |
2000.12.28 |
申请人 |
STMICROELECTRONICS S.R.I. |
发明人 |
NASTASI NICOLA;ARCIDIACONO DOROTEA;MAZZALI STEFANO |
分类号 |
H01L21/8247;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8247 |
代理机构 |
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地址 |
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