| 摘要 |
<p>A thin nitride layer (thickness below 50Å) is formed by chemical vapor deposition (CVD) over a seed layer on a base structure comprising storage nodes for stack capacitors in the memory cells of a semiconductor device, such as a dynamic random access memory (DRAM) device. Preferably, the DRAM device comprises a stack capacitor structure comprising hemispherical grain silicon covered by the ultra-thin nitride layer. Alternatively, the capacitor may comprise a trench capacitor structure. The CVD process produces the ultra-thin nitride layer, while maintaining goods step coverage and low leakage current.</p> |
