| 发明名称 |
METHOD AND APPARATUS FOR A 200 NS WRITE TO READ SWITCH TIME CIRCUIT |
| 摘要 |
The present invention includes a circuit which can achieve a 200 nano second write to read time. The present invention eliminates a switch in the RMR measurement circuit.
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| 申请公布号 |
US2001015865(A1) |
申请公布日期 |
2001.08.23 |
| 申请号 |
US19980212753 |
申请日期 |
1998.12.16 |
| 申请人 |
CHO HAE-SEOK;RANMUTHU INDUMINI |
发明人 |
CHO HAE-SEOK;RANMUTHU INDUMINI |
| 分类号 |
G11B5/00;G11B5/012;G11B5/02;G11B15/12;G11B19/02;(IPC1-7):G11B5/09;G11B20/10 |
主分类号 |
G11B5/00 |
| 代理机构 |
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