发明名称 Method for fabricating contact plug
摘要 A method for fabricating a contact plug that has a superior step coverage and does not have internal micro-cracks, including a first step for forming an insulating film including a contact hole on a silicon substrate, a second step for forming a Ti film in the contact hole, a third step for forming a TiN film on the Ti film, and a fourth step for repeatedly performing the second and third steps.
申请公布号 US2001016416(A1) 申请公布日期 2001.08.23
申请号 US20010770304 申请日期 2001.01.29
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 KIM KYU-HYUN
分类号 H01L21/28;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 主分类号 H01L21/28
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