发明名称 |
Method for fabricating semiconductor light emitting element |
摘要 |
The semiconductor light emitting element of the present invention includes: a compound semiconductor substrate having a first conductivity type; a light emitting layer; a compound semiconductor interface layer having a second conductivity type and not containing Al; and a current diffusion layer having the second conductivity type and being made of a compound semiconductor not containing Al.
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申请公布号 |
US2001016366(A1) |
申请公布日期 |
2001.08.23 |
申请号 |
US20010839114 |
申请日期 |
2001.04.23 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
SASAKI KAZUAKI;NAKAMURA JUNICHI |
分类号 |
H01L33/10;H01L33/12;H01L33/14;H01L33/30;H01L33/56;(IPC1-7):H01L21/00 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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