LATERAL DMOS IMPROVED BREAKDOWN STRUCTURE AND METHOD

摘要

In a lateral DMOS device (10) breakdown voltage is controlled by a voltage divider (50) coupled at opposite ends to the source (18) and drain (19). The divider node (N1) between first and second resistive elements (R1, R2) is connected to a second level conductive shield (M2). ILD layer (34) isolates the shield (M2) from first level conductive (M1) contacts.