POLYCRYSTALLINE THIN FILM AND SEMICONDUCTOR DEVICE

摘要

The leakage current of a semiconductor device using polycrystalline thin film is reduced. A semiconductor device includes thin film of polycrystalline silicon having a small average surface roughness, preferably less than 5 nm, along the centerline. The semiconductor device can exhibit higher reliability and better characteristics by reducing the average roughness along the centerline and keeping the ratio of the roughness to film thickness and grain size within predetermined ranges.