| 发明名称 |
METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, AND LIQUID-CRYSTAL DISPLAY |
| 摘要 |
The invention provides a method of manufacturing a thin-film transistor whose semiconductor surfaces are protected. The surfaces of semiconductor formed on a substrate are exposed to ozone-containing water to form oxide on the surfaces. Masks formed for etching and ion implantation are removed with oxide formed at least on exposed semiconductor surfaces.
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| 申请公布号 |
WO0161760(A1) |
申请公布日期 |
2001.08.23 |
| 申请号 |
WO2001JP01072 |
申请日期 |
2001.02.15 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;IKUTA, SHIGEO |
发明人 |
IKUTA, SHIGEO |
| 分类号 |
H01L21/336;(IPC1-7):H01L29/786;H01L21/265;H01L21/306;H01L21/316;G02F1/136 |
主分类号 |
H01L21/336 |
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