发明名称 METHOD OF FORMING CONTACTS
摘要 A method of forming a contact is disclosed. A substrate having a desired electrical contact location is provided. The substrate has a conductive layer. A first mask with an edge over the desired electrical contact location is formed on the substrate. A contact material is deposited over the first mask and the substrate. A first portion of the contact material is then removed such that a second portion of the contact material remains to form a contact adjacent to the edge of the mask, over the desired electrical contact location.
申请公布号 US2001016410(A1) 申请公布日期 2001.08.23
申请号 US19980201346 申请日期 1998.11.30
申请人 CHENG PENG;DOYLE BRIAN S. 发明人 CHENG PENG;DOYLE BRIAN S.
分类号 H01L21/033;H01L21/768;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L21/033
代理机构 代理人
主权项
地址