发明名称 |
METHOD OF FORMING CONTACTS |
摘要 |
A method of forming a contact is disclosed. A substrate having a desired electrical contact location is provided. The substrate has a conductive layer. A first mask with an edge over the desired electrical contact location is formed on the substrate. A contact material is deposited over the first mask and the substrate. A first portion of the contact material is then removed such that a second portion of the contact material remains to form a contact adjacent to the edge of the mask, over the desired electrical contact location.
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申请公布号 |
US2001016410(A1) |
申请公布日期 |
2001.08.23 |
申请号 |
US19980201346 |
申请日期 |
1998.11.30 |
申请人 |
CHENG PENG;DOYLE BRIAN S. |
发明人 |
CHENG PENG;DOYLE BRIAN S. |
分类号 |
H01L21/033;H01L21/768;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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