| 发明名称 |
Method of forming tunnel oxide film |
| 摘要 |
<p>A tunnel oxidation film is formed by anodizing a bulk aluminum material (1) thereby creating an amorphous oxide film (2) and then a tunnel oxidation film is formed by irradiation with oxygen ions (3). A further aluminium layer can then be deposited to complete the device preferably for use as X-ray sensor element. <IMAGE></p> |
| 申请公布号 |
EP1126532(A2) |
申请公布日期 |
2001.08.22 |
| 申请号 |
EP20010301088 |
申请日期 |
2001.02.07 |
| 申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
SUZUKI, HIROYUKI;HASEGAWA, MASAO |
| 分类号 |
G01T1/24;C23F4/00;C25D11/18;C25F3/20;H01L21/316;H01L39/24;(IPC1-7):H01L45/00 |
主分类号 |
G01T1/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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