发明名称 MIRRORTRON SPUTTERING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a facing target sputtering system in which the exchanging frequency of targets can be reduced by increasing the total quantity of erosion to one target, and, also, in reactive sputtering, stable sputtering is maintained, and film deposition can smoothly be performed. SOLUTION: In a mirrortron sputtering system in which a pair of targets 9 are oppositely arranged at intervals in a vacuum vessel 1, moreover, a magnet 12 for forming a magnetic field space H is arranged between the targets 9 at each rear side of targets 9 and, furthermore, a substrate 22 is arranged at the side direction of the space between the targets 9 on the magnetic field space H, the magnetic field space H has a magnetic field distribution in which magnetic flux density is high at the peripheral part, and magnetic flux density is low at the central part.
申请公布号 JP2001226770(A) 申请公布日期 2001.08.21
申请号 JP20000033886 申请日期 2000.02.10
申请人 HIRATA TOYOAKI 发明人 HIRATA TOYOAKI;NAOE MASAHIKO
分类号 C23C14/00;C23C14/35;H01J37/34;(IPC1-7):C23C14/35 主分类号 C23C14/00
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