| 发明名称 |
Method of producing semiconductor laser diode |
| 摘要 |
A semiconductor laser diode includes a mesa having a width on a semiconductor substrate and aligned with a direction of resonance, a current blocking layer formed by selective growth on both sides of the mesa and having a first embedded layer and a second embedded layer covering the first embedded layer.
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| 申请公布号 |
US6277663(B1) |
申请公布日期 |
2001.08.21 |
| 申请号 |
US19990395956 |
申请日期 |
1999.09.14 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUMOTO KEISUKE;TAKAGI KAZUHISA;TAKIGUCHI TOHRU |
| 分类号 |
H01S5/00;H01S5/20;H01S5/22;H01S5/227;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
H01S5/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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