发明名称 |
Semi-additive process (SAP) architecture for organic leadless grid array packages |
摘要 |
A substrate which has a first conductive layer that is attached to a first dielectric layer. A second conductive layer is attached to the first dielectric layer. The second conductive layer may be a plated copper material that extends through a via opening of the dielectric and is attached to the first conductive layer. A third conductive layer is attached to the second conductive layer, including a sidewall of the third layer. A second dielectric can be attached to the third conductive layer. The third conductive layer may be a plated nickel-copper composition which improves the adhesion to subsequent layers in the substrate, particularly between the second dielectric and the sidewall of the second conductive layer.
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申请公布号 |
US6278185(B1) |
申请公布日期 |
2001.08.21 |
申请号 |
US19980085546 |
申请日期 |
1998.05.27 |
申请人 |
INTEL CORPORATION |
发明人 |
MURALI VENKATESAN;ISHIDA KENZO;KAISER BRIAN A.;VAIDYANATHAN ANANT |
分类号 |
H01L21/48;H05K3/10;H05K3/28;H05K3/38;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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