发明名称 |
Method for forming an array of sidewall-contacted antifuses having diffused bit lines |
摘要 |
An array of sidewall-contacted antifuses is formed by a method that reduces the sensitivity of the array to masking alignment errors. The method forms a plurality of spaced-apart bit lines in a semiconductor material. Rows and columns of insulated contacts are formed on the semiconductor material such that each bit line is contacted a plurality of times by an insulated contact. In each row of contacts, each contact has an exposed sidewall. A plurality of word lines are then formed over the contacts such that a word line is formed over each exposed sidewall in a row of exposed sidewalls. The word lines include a dielectric layer and an overlying layer of conductive material.
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申请公布号 |
US6277724(B1) |
申请公布日期 |
2001.08.21 |
申请号 |
US19990233370 |
申请日期 |
1999.01.19 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BERGEMONT ALBERT;KALNITSKY ALEXANDER |
分类号 |
H01L23/525;(IPC1-7):H01L21/44 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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