| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist material responsive to a high-energy ray, having excellent sensitivity, resolution and oxygen plasma etching resistance at a wavelength of <=200 nm, especially <=170 nm, consequently the resist material capable of being made into a resist material having a slight absorption especially at an exposure wavelength of F2 excimer laser due to these characteristics, readily forming a pattern which is fine and yet vertical to a substrate, therefore suitable as a fine pattern forming material for producing a very large scale integration. SOLUTION: This a polymer compound is characterized in that a main chain contains a fluorinated acrylic derivative of the following general formula (1) (R1, R2 and R3 are each a hydrogen atom, a fluorine atom, a 1-20C straight- chain, branched chain or cyclic alkyl group or fluorinated alkyl group and at least one of R1, R2 and R3 contains a fluorine atom; R4 is a silicon-containing containing at least one silicon atom) as a repeating unit. |
