发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.
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申请公布号 |
US6278132(B1) |
申请公布日期 |
2001.08.21 |
申请号 |
US19990272701 |
申请日期 |
1999.03.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;FUKUNAGA TAKESHI |
分类号 |
H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L27/108;H01L29/04 |
主分类号 |
H01L21/77 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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