发明名称 |
Method of planarizing dielectric layer |
摘要 |
A method of planarizing a dielectric layer comprising the steps of providing a substrate having structures already formed thereon, and then forming a borophosphosilicate glass layer over the substrate. Next, a rapid thermal process is applied heating the borophosphosilicate layer to cause a thermal flow, and then the borophosphosilicate layer is etched back so that a planar surface is obtained. Finally, a passivation layer is formed over the borophosphosilicate glass layer to prevent the formation of pits in subsequent pre-metal wet etching operations.
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申请公布号 |
US6277754(B1) |
申请公布日期 |
2001.08.21 |
申请号 |
US19980067548 |
申请日期 |
1998.04.27 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WANG BRIAN;HSU CHIH-CHING |
分类号 |
H01L21/3105;H01L21/316;(IPC1-7):H01L21/311;H01L21/476 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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