| 发明名称 |
Method of fabricating self-aligned silicide |
| 摘要 |
Self-aligned silicidation (e.g., Ti, Co, or Ni silicides) for silicon integrated circuits with an HF-based final etch of the silicide to remove filaments. Either ultradilute HF solution or HF vapor may be used.
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| 申请公布号 |
US6277743(B1) |
申请公布日期 |
2001.08.21 |
| 申请号 |
US19990344649 |
申请日期 |
1999.06.25 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
O'BRIEN SEAN C. |
| 分类号 |
H01L29/78;H01L21/28;H01L21/285;H01L21/308;H01L21/3213;H01L21/336;(IPC1-7):H01L21/44 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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