发明名称 Method to change transmittance of attenuated phase-shifting masks
摘要 A method of forming a high transmittance attenuated phase-shifting mask blank, comprising the following steps. An attenuated phase-shifting mask is provided that includes a shifter layer overlying a transparent substrate. The attenuated phase-shifting mask having a first transmittance and an initial phase angle. The attenuated phase-shifting mask and more specifically the shifter layer is treated with an aqueous solution of NH4OH:H2O2 for a first predetermined time increasing the first transmittance to a second transmittance and decreasing the initial phase angle to a second phase angle. The attenuated phase-shifting mask is then treated with a selected acid or base for a second predetermined time increasing the second transmittance to a third, predetermined transmittance and increasing the phase angle to a third, predetermined phase angle. The third phase angle is preferably substantially identical to the initial phase angle.
申请公布号 US6277528(B1) 申请公布日期 2001.08.21
申请号 US20000489499 申请日期 2000.01.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 TZU SAN-DE;CHOU WEI-ZEN
分类号 G03F1/00;G03F7/20;(IPC1-7):G03F9/00 主分类号 G03F1/00
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