发明名称 |
Method of fabricating interconnects utilizing fluorine doped insulators and barrier layers |
摘要 |
A plurality of lower-level metal interconnects are formed over a semiconductor substrate. A first fluorine-containing insulating film, made of a fluorine-doped insulator, is formed to fill in gaps between adjacent ones of the lower-level metal interconnects over the semiconductor substrate. An interlevel insulating film is formed over the lower-level metal interconnects and the first fluorine-containing insulating film. And a plurality of upper-level metal interconnects are formed on the interlevel insulating film. The interlevel insulating film includes: a second fluorine-containing insulating film made of a fluorine-doped insulator; and a silicon-rich insulating film containing a larger quantity of silicon than a quantity defined by stoichiometry.
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申请公布号 |
US6277730(B1) |
申请公布日期 |
2001.08.21 |
申请号 |
US19990249844 |
申请日期 |
1999.02.16 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
YUASA HIROSHI;UEDA SATOSHI |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L71/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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