发明名称 Read-only memory and method for fabricating the same
摘要 A read-only memory includes a semiconductor substrate; a memory cell matrix which is formed on the semiconductor substrate; and word and bit lines which define the locations of the memory cell matrix. The memory cell matrix includes field effect transistors, each of which turns off when accessed or addressed; and conducting regions, which keep conductive state all the time. Binary data stored in the memory cell matrix are determined by detecting current flowing through the selected bit line.
申请公布号 US6278629(B1) 申请公布日期 2001.08.21
申请号 US20000532041 申请日期 2000.03.21
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 MIZUHASHI HIROSHI;KATOH TERUO
分类号 H01L27/10;G11C17/12;H01L21/8247;H01L27/115;(IPC1-7):G11C17/00 主分类号 H01L27/10
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