| 摘要 |
A method of fabricating a semiconductor light-emitting device is provided in the present invention. The semiconductor light-emitting device includes a light-emitting region such as a PN-junction, or a double heterojunction, or a multiple quantum well. According to the invention, an layer consisting of an electrode material is formed overlaying a top-most layer of the semiconductor light-emitting device. Afterwards, an annealing process is performed to the resultant structure so that the electrode material diffuses into the top-most layer. Subsequently, the layer consisting of the electrode material is etched partially to formed an upper electrode on the top-most layer and to expose part of the top-most layer. Substantially, the exposed part of the top-most layer exhibits a rough morphology. Thereby, the external quantum efficiency of the semiconductor light-emitting device is enhanced. The method can be implemented regardless of material and lattice orientation of the top-most layer.
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