| 摘要 |
PROBLEM TO BE SOLVED: To provide a ceramic film formation process for forming a ceramic film such as meso-porous silica film, on a substrate such as silicon wafer. SOLUTION: The film formation process comprises: a stage for preparing a film forming liquid which consists of a ceramic precursor, a catalyst, a surfactant and a solvent; a stage for placing the film forming liquid on a substrate; and a stage for removing the solvent from the film forming liquid on the substrate to form a ceramic film on the substrate, wherein the ceramic film thus formed has a <2.3 dielectric constant, a <1 ppm halide content and a <500 ppm metal content and therefore is useful in the present and future application to microelectronics. |
