| 摘要 |
PROBLEM TO BE SOLVED: To grow an SiC single crystal uniform in the longitudinal and radial directions by preventing the deterioration of the side surface of a growing crystal, which deterioration is caused by relative movement of the growing crystal. SOLUTION: A state that the outer periphery of an SiC single crystal 5 is surrounded with a guide 6 having a diameter slightly larger than the diameter of the SiC single crystal 5 is provided. Then, the SiC single crystal 5 is pulled together with a seed crystal supporting tool 2 in the reverse direction to the growth direction according to the growth of the SiC single crystal 5 so that the surface of the SiC single crystal 5 becomes nearly same plane with the surface 6a of the guide 6. Thus, by surrounding the SiC single crystal 5 with the guide 6 having slightly lager diameter than the crystal 5, it becomes possible to prevent the carbonization of the side surface of the SiC single crystal 5, where the growth condition is changed by pulling, and to prevent sticking of polycrystal to the side surface. Thereby the good SiC single crystal 5 can be obtained. |
