发明名称 |
Method for manufacturing an SOI wafer |
摘要 |
A method including: forming doped regions on a monocrystalline substrate; growing an epitaxial layer; forming trenches in the epitaxial layer extending to the doped regions; anodizing the doped regions in an electro-galvanic cell to form porous silicon regions; oxidizing the porous silicon regions; removing the oxidized porous silicon regions to form a buried air gap; thermally oxidizing the substrate to grow an oxide region from the walls of the buried air gap and the trenches, until the buried air gap and the trenches themselves are filled.
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申请公布号 |
US6277703(B1) |
申请公布日期 |
2001.08.21 |
申请号 |
US19990311889 |
申请日期 |
1999.05.14 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
BARLOCCHI GABRIELE;VILLA FLAVIO FRANCESCO |
分类号 |
H01L21/302;H01L21/3065;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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