| 摘要 |
A magnetoresistive magnetic field sensor comprises a bilayer with a first soft magnetic layer and in direct contact therewith a second soft magnetic layer. The layers are exchange coupled to one another. The second soft magnetic layer is located below, on or in the first soft magnetic layer in a meandering, spiraling or suchlike structure. The electrical resistivity of the first soft magnetic layer is higher than that of the second soft magnetic layer, while the difference in electrical resistivity between both soft magnetic layers is at least a factor of 10, preferably a factor of 100. The magnetoresistive magnetic field sensor is applied in a magnetic read head device for a recording information system.
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