Method for decreasing contact resistance of an electrode positioned inside a misaligned via for multilevel interconnects

摘要

A method for removing a resistive film formed on an electrode to increase the conductive contact area of the electrode positioned in a misaligned contact hole. The method comprises providing a substrate supporting an electrode layer. The electrode layer is etched to produce metal lines. During the processing of the metal lines, a resistive film is formed thereon. The resistive film is removed and a protective barrier is formed on the metal lines. A dielectric layer is formed on the substrate, including the metal lines. The dielectric layer is subsequently patterned to form contact holes or vias to expose a portion of the metal lines. The contact holes are filled with plugs such that a second electrode layer can be formed on the dielectric layer and the plugs.