| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to form the contact hole less than the minimum size of a pattern defined by a photo-lithography etching process by forming the sidewall of a nitride film and by forming the contact hole on an oxide film with the high etching ratio of the nitride film and the oxide film. CONSTITUTION: An oxide film(2) and a nitride film(3) are deposited on a substrate(1) in turn. A portion of the nitride film(3) is removed by a photolithography etching process, so that a portion of the oxide film(2) is exposed. A nitride film sidewall(4) is formed on the side of the etching area of the nitride film(3). The exposed oxide film(2) is etched by using the nitride film(3) and the nitride film sidewall(4) as a mask, so that a contact hole is formed.
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