| 摘要 |
PURPOSE: To constitute a structure in a semiconductor IC free from bringing a lately formed dielectrics (capacitor insulating film) in contact with a basic plug, even when a capacitor lower electrode is formed on the condition that some displacement in reference to the basic plug exists in the capacitor lower electrode. CONSTITUTION: The semiconductor IC is formed in a source/drain region of MISFET on the main surface of the semiconductor substrate, by embedding into a through hole in an insulating film 17 as plug 21 and a ruthenium silicide film 22 comprising an electrically connected silicon. A silicon nitride film 23 and a silicon oxide film 24 are deposited in order, and a hole 26 is formed so as to expose the ruthenium silicide film 22. Further, a barrier film 27 comprising an oxide film of the ruthenium silicide is formed on the surface of the ruthenium silicide film 22 by means of natural oxidation, and a ruthenium film 28 serving as the lower electrode is formed inside the hole 26.
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