| 摘要 |
PURPOSE: To provide a vertical thermal treatment device reaction tube, which is capable of providing semiconductor wafers provided with oxide films of a uniform thickness, without using a mechanism that rotates the semiconductor wafers and a vertical thermal treatment apparatus provided therewith. CONSTITUTION: Reaction gas introduced through a gas inlet 1 is fed uniformly into a reaction tube 4, passing through a gas dispersion plate 2. Heat is uniformly taken away from around dummy wafers 9 located near the gas inlet 1, so that a gas flow becomes uniform in temperature distribution in the region of the dummy wafers 9. Therefore, an oxide film can be kept constant in thickness, independently of whether a rotating mechanism is provided even if a gas flow changes in the region of rear wafers 10. Accordingly, even if a mechanism which rotates the wafers is not provided, a film formed on the circumferential edge of the real wafer 10 can be set uniform in thickness. As a vertical thermal treatment apparatus is not equipped with a mechanism which rotates wafers, the apparatus can be provided at a lower cost.
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