发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND PRECHARGING METHOD THEREOF |
摘要 |
PURPOSE: A semiconductor memory device and a precharging method thereof are provided to reduce the number of circuits for precharging local data input/output lines in a stack bank structure, thereby reducing a chip size. CONSTITUTION: A memory cell array block has the desired number of partial blocks connected to a plurality of partial lock data input/output lines. A plurality of switching portions are respectively connected between the partial local data input/output lines to connect the desired number of partial local data input/output lines responding to a precharging signal. A precharging portion precharges the partial local data input/output lines responding to the precharging signal. Each of the switching portions is comprised of the first NMOS transistor which is turned on responding to the precharging signal. The precharging portion has the second and third NMOS transistor and the fourth NMOS transistor. The second and third NMOS transistor is connected to the partial local data input/output line in series and turned on responding to the precharging signal.
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申请公布号 |
KR20010077494(A) |
申请公布日期 |
2001.08.20 |
申请号 |
KR20000005310 |
申请日期 |
2000.02.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK, JIN SEOK |
分类号 |
G11C11/409;G11C7/10;G11C7/12;G11C11/401;(IPC1-7):G11C7/12 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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