发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT, AND INTERNAL POWER SOURCE VOLTAGE GENERATING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE: To generate surely internal power source voltage when external power source voltage is low, in a semiconductor integrated circuit having a voltage generating circuit generating internal power source voltage using external power source voltage. CONSTITUTION: This device is provided with a voltage generating circuit and a power-on circuit. The voltage generating circuit is controlled by reference voltage, and generates internal power source voltage to be supplied to an internal circuit using external power source voltage externally supplied. When both of external power source voltage and internal power source voltage exceed the prescribed value, the power-on circuit non-activates a power-on reset signal resetting the prescribed internal circuit. The voltage generating circuit supplies forcedly external power source voltage as internal power source voltage at the time of activation of a power-on reset signal. Therefore, when external power source voltage is lower and the voltage generating circuit does not operate normally such as at the time of power-on and the like, internal power source voltage is generated following external power source voltage.
申请公布号 KR20010077975(A) 申请公布日期 2001.08.20
申请号 KR20010001727 申请日期 2001.01.12
申请人 FUJITSU LIMITED 发明人 KATO YOSHIHARU;WAKASUGI NOBUYOSHI
分类号 G11C11/407;G05F1/46;G05F3/26;G11C11/4074;H01L21/822;H01L27/04;(IPC1-7):G11C11/407 主分类号 G11C11/407
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