| 摘要 |
PURPOSE:To provide a highly accurate downsized temperature sensor system by employing a thin film transistor having amplifying function as a temperature sensor. CONSTITUTION:In a temperature sensor 1, a bottom gate electrode 3 is formed on an insulating substrate 2 and covered with a bottom gate insulating film 4. A semiconductor layer 5 is formed thereon along with a source electrode (S) 6 and a drain electrode (D) 7. They are covered with a top gate insulating film 10 and a top gate electrode (TG) 11 is formed thereon while opposing to the bottom gate electrode (BG) 3. Consequently, the photosensor 1 has a combination of a reverse stagger type thin film transistor and a coplanar thin film transistor. Switching is made between sense state and reset state by controlling the voltage to be applied to the top gate electrode (TG) 11 and the temperature at that time is determined based on the time to be elapsed after switching to the sense state before the drain current IDS of the temperature sensor 1 reaches a predetermined level. |
