发明名称 Chloride-free process for the production of alkylsilanes suitable for microelectronic applications
摘要 This invention includes a process for producing an alkylsilane, comprising reducing an alkoxysilane in the presence of an alkali metal hydride in the presence of a high boiling solvent. The alkylsilane has a boiling point lower than the boiling point of the solvent, which is typically diglyme. This invention also includes a chloride-free alkylsilane formed from the reduction of an alkoxysilane in the presence of an alkali metal hydride. The alkylsilane produced according to the process of the present invention may be useful in microelectronic applications, such as in the production of chloride-free low dielectric constant materials which may be produced by the chemical vapor deposition of such silanes.
申请公布号 AU7205901(A) 申请公布日期 2001.08.20
申请号 AU20010072059 申请日期 2001.02.08
申请人 GELEST, INC. 发明人 BARRY, C. ARKLES;YOULIN PAN;GERALD LARSON
分类号 C07F7/08 主分类号 C07F7/08
代理机构 代理人
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