| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emission type semiconductor light-emitting element of lnGaAlP wherein constant light emission is provided at high efficiency. SOLUTION: By forming a transparent electrode of sufficient conductivity, a current is evenly fed in the longitudinal direction of an element to an opening part of a surface electrode. By providing a contact layer where a carbon is doped under the transparent electrode, a contact resistance to the transparent electrode comprising oxide such as ITO is significantly reduced. Further, by providing a contact layer where a carbon is doped by a specified amount at a place comprising Zn and the like, a contact resistance to an ITO electrode is reduced. A carbon does not diffuse, like a zinc, to degrade an element characteristics. Further, by inserting an intermediate band gap layer comprising such band gap as something between the contact layer and a clad layer, band discontinuity of a balance band is relaxed to promote flow into a positive hole to decrease an element resistance. |
